Schottky electroluminescent diodes with n-doped germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4883466
Reference30 articles.
1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
2. Fermi-level pinning and charge neutrality level in germanium
3. Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
4. A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
5. Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
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1. Direct-Bandgap Electroluminescence From Germanium With Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure;IEEE Transactions on Electron Devices;2020-05
2. Strain engineering and mechanical assembly of silicon/germanium nanomembranes;Materials Science and Engineering: R: Reports;2018-06
3. Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes;Semiconductor Science and Technology;2017-08-30
4. Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes;Japanese Journal of Applied Physics;2016-03-16
5. Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure;Thin Solid Films;2016-03
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