Thermal stability of engineered Schottky barriers in Al/Si/GaAs(001) diodes-Reference-Cited by-同舟云学术

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Thermal stability of engineered Schottky barriers in Al/Si/GaAs(001) diodes

Published:1996-09-23 Issue:13 Volume:69 Page:1927-1929
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sorba L.,Yildirim S.,Lazzarino M.,Franciosi A.,Chiola D.,Beltram F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117624

Reference10 articles.

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schottky barrier heights at polar metal/semiconductor interfaces;Physical Review B;2003-08-22

2. Metal/III–V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles;Applied Physics Letters;2001-09-03

3. Ideal unreactive metal/semiconductor interfaces: The case ofZn/ZnSe(001);Physical Review B;2001-05-18

4. Fine Tuning of Au/SiO2/Si Diodes by Varying Interfacial Dipoles Using Molecular Monolayers;Advanced Materials;2001-04

5. Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux;Philosophical Magazine B;2000-05

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