Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux-Reference-Cited by-同舟云学术

Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux

Published:2000-05 Issue:5 Volume:80 Page:1055-1069
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Carlino E.¹²,Sorba L.¹³,Franciosi A.⁴,Heun S.⁴⁵,Müller B. H.⁴⁶

Affiliation:

1. a Parco Scientifico-technologico Ionico Salentino, Centro Nazionale Ricerca e Sviluppo Materiali , Strada Statale 7, Appia Km 712, 1-72100 , Italy

2. d E-mail:

3. c Istituto ICMAT, Consiglio Nazionale delie Ricerche , Montelibretti, Roma , Italy

4. b Laboratorio Nazionale Tecnologie Avanzate Superfici e Catalisi , Istituto Nazional per la Fisica delia Materia , Area di Ricerca, Padriciano 99, I-34012 , Trieste , Italy

5. e Sincrotron Trieste , Strada Statale 14, Km 163.5, I-34012 , Basovizza , Trieste , Italy

6. f Institut für Halbleitertechnologie, Universität Hannover , D-30167 , Hannover , Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418630008221973

Reference23 articles.

1. Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation

2. Chemically Induced Charge Redistribution at Al-GaAs Interfaces

3. Modification of Al/GaAs(001) Schottky barriers by means of heterovalent interface layers

4. Silicon‐induced local interface dipole in Al/GaAs(001) Schottky diodes

5. Structural characterization of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP heterostructures by transmission electron microscopy and high‐resolution x‐ray diffraction

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1. Metal/III–V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles;Applied Physics Letters;2001-09-03

2. Tunable Schottky barrier contacts to In[sub x]Ga[sub 1−x]As;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000