Observation of impurity effects on the nucleation of arsenic precipitates in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109360
Reference16 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
3. Optically detected electron paramagnetic resonance of arsenic antisites in low‐temperature GaAs layers
4. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
5. Breakdown of crystallinity in low‐temperature‐grown GaAs layers
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