Laser field and electric field effects on exciton states and optical properties in zinc-blende GaN/AlGaN quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809749
Reference28 articles.
1. Exploiting piezoelectric charge for high performance graded InGaN nanowire solar cells
2. Coupling of intersubband transitions to zone-folded acoustic phonons in a GaN/AlN superlattice
3. Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures
4. Free carrier accumulation at cubic AlGaN/GaN heterojunctions
5. Band offsets in cubic GaN/AlN superlattices
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1. Combined Effects of Intense THz Laser Field and Applied Electric Field on Binding Energy of Exciton in GaAs/GaAlAs Finite Spherical Quantum Dot;Journal of Nanoscience and Technology;2023-09-27
2. Effects of electric field and hydrostatic pressure on the exciton states in strained zinc-blende InxGa1−xN-GaN coupled double quantum wells;Materials Science in Semiconductor Processing;2023-04
3. Effects of strain and hydrostatic pressure on exciton properties in asymmetric zinc-blende (In,Ga)N/GaN coupled double quantum wells;Journal of Physics and Chemistry of Solids;2023-02
4. Quantum coupling and hot-carriers impacts on excitons and optical spectrum of GaN devices;Physica E: Low-dimensional Systems and Nanostructures;2022-05
5. Electronic states driven by the crystal field in two-dimensional materials: The case of antimonene;Physical Review B;2022-03-04
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