Anharmonicity in light scattering by optical phonons in GaAs1-xBix-Reference-Cited by-同舟云学术

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Anharmonicity in light scattering by optical phonons in GaAs1-xBix

Published:2016-05-28 Issue:20 Volume:119 Page:205706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Joshya R. S.¹^ORCID,Rajaji V.²,Narayana Chandrabhas²^ORCID,Mascarenhas A.³,Kini R. N.¹^ORCID

Affiliation:

1. Indian Institute of Science Education and Research Thiruvananthapuram (IISERTVM), CET Campus, Thiruvananthapuram, Kerala 695016, India

2. Jawaharlal Nehru Center for Advanced Scientific Research (JNCASR), Bangalore 560064, India

3. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401, USA

Funder

Science and Engineering Research Board (SERB)

Basic Energy Sciences (BES)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4952381

Reference39 articles.

1. Band gap of GaAs1−xBix, 0

2. Giant Spin-Orbit Bowing inGaAs1−xBix

3. Characteristics of Semiconductor Alloy GaAs1-xBix

4. Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

5. light emitting diodes

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1. Role of defects in tailoring the structural, electrical and optical properties of Schottky diodes based on GaAsBi alloy through gamma radiation;Materials Science in Semiconductor Processing;2024-08

2. Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence;Materials Science in Semiconductor Processing;2023-08

3. Pressure-induced topological crystalline insulating phase in TlBiSe2 : Experiments and theory;Physical Review B;2023-05-22

4. Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode;Japanese Journal of Applied Physics;2023-01-01

5. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy;Journal of Alloys and Compounds;2021-12

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