Crystallization and phase separation in Ge2+xSb2Te5 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1604458
Reference21 articles.
1. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
2. Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth
3. Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
4. Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge[sub 2]Sb[sub 2.3]Te[sub 5] films
5. Laser induced crystallization of amorphous Ge2Sb2Te5 films
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