Vertical stacks of shape-engineered InAs∕InAlGaAs quantum dot and its influences on the lasing characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2721854
Reference12 articles.
1. Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate
2. InAs-InAlGaAs quantum dot DFB lasers based on InP [001
3. Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device
4. Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures
5. Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55μm quantum dot laser
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1. InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 µm lasers;Optical Materials Express;2024-03-28
2. Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications;Journal of Physics D: Applied Physics;2023-04-27
3. Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions;ECS Journal of Solid State Science and Technology;2022-09-01
4. Optical properties of InAs quantum dots embedded in InGaAs/AlGaAs/GaAs structures with different capping layers;Journal of Physics: Conference Series;2021-01-01
5. AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots;Materials Science in Semiconductor Processing;2019-02
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