Radiation effects in low‐pressure reoxidized nitrided oxide gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99711
Reference23 articles.
1. Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas
2. The effects of thermal nitridation conditions on the reliability of thin nitrided oxide films
3. Rapid thermal nitridation of SiO2 for nitroxide thin dielectrics
4. Rapid thermal nitridation of thin thermal silicon dioxide films
5. Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics
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1. Compositional analysis of thin SiOxNy:H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-04
2. Compositional analysis of SiOxNy:H films by heavy-ion ERDA: the problem of radiation damage;Surface and Interface Analysis;2002-08
3. Radiation Damage in Silicon MOS Devices;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
4. Interface States Distribution in Electrical Stressed Oxynitrided Gate‐Oxide;Journal of The Electrochemical Society;1998-07-01
5. Negative stress-induced current in oxidized nitride layers of different nitride thicknesses (<5 nm);Solid-State Electronics;1996-03
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