Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3694140
Reference47 articles.
1. Barrier Height Studies on Metal‐Semiconductor Systems
2. Surface‐State and Interface Effects in Schottky Barriers at n‐Type Silicon Surfaces
3. Transition in Schottky Barrier Formation with Chemical Reactivity
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