Reversible control of doping in graphene-on-SiO2 by cooling under gate-voltage
Author:
Affiliation:
1. Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016, India
Funder
DST | Science and Engineering Research Board
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4998643
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1. The Role of External Defects in Chemical Sensing of Graphene Field-Effect Transistors
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