Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures
Author:
Affiliation:
1. Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
Funder
Excellence Cluster Nanosystems Initiative Munich
TUM.solar in the frame of the Bavarian Collaborative Research Project
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4933175
Reference32 articles.
1. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes
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3. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
4. Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates
5. Platinum Nanoparticles on Gallium Nitride Surfaces: Effect of Semiconductor Doping on Nanoparticle Reactivity
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