Memristive devices from ZnO nanowire bundles and meshes-Reference-Cited by-同舟云学术

Memristive devices from ZnO nanowire bundles and meshes

Published:2017-10-09 Issue:15 Volume:111 Page:153504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Puzyrev Y. S.¹,Shen X.¹²,Zhang C. X.³,Hachtel J.¹^ORCID,Ni K.³,Choi B. K.⁴,Zhang E.-X.³,Ovchinnikov O.¹,Schrimpf R. D.³^ORCID,Fleetwood D. M.¹³,Pantelides S. T.¹³⁵

Affiliation:

1. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

2. Department of Physics and Materials Science, University of Memphis, Memphis, Tennessee 38152, USA

3. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA

4. Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, USA

5. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

Funder

National Science Foundation

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5008265

Reference23 articles.

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4. $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

5. Vacancy breathing by grain boundaries—a mechanism of memristive switching in polycrystalline oxides

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