Vacancy breathing by grain boundaries—a mechanism of memristive switching in polycrystalline oxides
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1557/mrc.2013.32.pdf
Reference30 articles.
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3. H. Akinaga and H. Shima: Resistive random access memory (ReRAM) based on metal oxides. IEEE 98, 2237 (2010).
4. B. Muthuswamy and P.P. Kokate: Memristor-based chaotic circuits. IETE Tech. Rev. 26, 417 (2009).
5. S.H. Jo, T. Chang, I. Ebong, B.B. Bhadviya, P. Mazumder, and W. Lu: Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 10, 1297 (2010).
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