Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires
Author:
Affiliation:
1. IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, South Korea
2. Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756, South Korea
Funder
Ministry of Trade, Industry and Energy (Ministry of Trade, Industry and Energy, Korea)
Electronics and Telecommunications Research Institute (ETRI)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4890848
Reference23 articles.
1. An efficient room-temperature silicon-based light-emitting diode
2. Efficient silicon light-emitting diodes
3. Optical gain in silicon nanocrystals
4. Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices
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