Temperature dependence of the photoluminescence intensity of ordered and disordered In0.48Ga0.52P
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113078
Reference11 articles.
1. Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure
2. Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers
3. Chemical ordering in GaxIn1−xP semiconductor alloy grown by metalorganic vapor phase epitaxy
4. Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys
5. Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P
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