Insitumonitoring by ellipsometry of metalorganic epitaxy of GaAlAs‐GaAs superlattice
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327815
Reference6 articles.
1. Semiconductor superfine structures by computer-controlled molecular beam epitaxy
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5. Properties of a New Nondifferentiating Method for Studying Structures in the Presence of a Distorted Background
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1. Selected contactless optoelectronic measurements for electronic applications (invited);Review of Scientific Instruments;1998-02
2. Reflection;Optical Diagnostics for Thin Film Processing;1996
3. Optical characterisation of semiconductor surfaces and interfaces;Progress in Surface Science;1995-05
4. In-Situ Monitoring Of Mocvd Grown Inall_ As/Gaas Epitaxial Layers By Two Laser Beams Reflectometry;MRS Proceedings;1995
5. Optical dispersion of AlxGa1−xAs at crystal growth temperature;Journal of Applied Physics;1994-12-15
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