Dependence of substitutional C incorporation on Ge content for Si1−x−yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332111
Reference12 articles.
1. Advanced Column-IV Epitaxial Materials for Silicon-Based Optoelectronics
2. Solubility of Carbon in Silicon and Germanium
3. Growth and properties of strained Si1-x-yGexCylayers
4. Ternary SiGeC alloys: growth and properties of a new semiconducting material
5. Growth of ternary alloy Si1−x−yGexCy by rapid thermal chemical vapor deposition
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1. Improved performance of trench power MOSFET with SiGeC-based channel;Microelectronics Reliability;2011-02
2. Influence of Carbon inIn-situCarbon-Doped SiGe Films on Si(001) Substrates on Epitaxial Growth Characteristics;Japanese Journal of Applied Physics;2010-04-20
3. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010
4. Photoluminescence of strained Si1−x−yGexCy epilayers on Si(100);Thin Solid Films;2008-11
5. Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGe HBTs;Applied Surface Science;2008-07
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