Electronic properties of the Sm∕4H-SiC surface alloy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2150588
Reference25 articles.
1. Physical Properties of SiC
2. Physical Properties of SiC
3. Theoretical calculations of the primary defects induced by pions and protons in SiC
4. Metal Schottky barrier contacts to alpha 6H‐SiC
5. The interfacial properties of erbium films on the two polar faces of 6H-SiC(0001)
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1. A barrier model for metal-SiC contact system;Superlattices and Microstructures;2020-04
2. Fermi level unpinning of metal/p-type 4H-SiC interface by combination of sacrificial oxidation and hydrogen plasma treatment;Journal of Applied Physics;2019-01-14
3. Effects of sacrificial oxidation on surface properties of n- and p-type 4H-SiC: implications for metal contact behaviors;Semiconductor Science and Technology;2018-12-03
4. Surface Reactivity and Magnetism at Metal-Semiconductor Interfaces;Size Effects in Nanostructures;2014
5. Structure, reactivity, electronic configuration and magnetism of samarium atomic layers deposited on Si(001) by molecular beam epitaxy;Applied Surface Science;2013-02
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