Theoretical calculations of the primary defects induced by pions and protons in SiC-Reference-Cited by-同舟云学术

Theoretical calculations of the primary defects induced by pions and protons in SiC

Published:2002-06 Issue:3 Volume:485 Page:768-773
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Lazanu S.,Lazanu I.,Borchi E.,Bruzzi M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference29 articles.

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4. Semiconductor particle tracking detectors

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