Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires-Reference-Cited by-同舟云学术

Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires

Published:2004-02-02 Issue:5 Volume:84 Page:786-788
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alderighi Daniele,Zamfirescu Marian,Vinattieri Anna,Gurioli Massimo,Sanguinetti Stefano,Povolotskyi Michael,Gleize Jerome,Di Carlo Aldo,Lugli Paolo,Nötzel Richard

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1639504

Reference20 articles.

1. Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires

2. Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes

3. Excitonic lasing in semiconductor quantum wires

4. Enhanced optical band-gap modulation in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates

5. Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patternedGaAs(311)Asubstrates

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