Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99559
Reference5 articles.
1. Delineation of Shallow Junctions in Silicon by Transmission Electron Microscopy
2. Direct Observations of n‐MOSFET Channel Lengths
3. Charge collection scanning electron microscopy
4. Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistors
5. Apparatus for the Measurement of Small Angles
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1. Electrochemistry of Silicon Etching;Encyclopedia of Electrochemistry;2007-02-23
2. High-resolution scanning capacitance microscopy by angle bevelling;Materials Science in Semiconductor Processing;2001-02
3. Two-dimensional dopant profiling of submicron metal–oxide–semiconductor field-effect transistor using nonlinear least squares inverse modeling;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
4. Selective Etching of B‐Doped Silicon: Mechanisms and Two‐Dimensional Delineation of Concentration Profiles;Journal of The Electrochemical Society;1995-05-01
5. Two-dimensional spreading resistance profiling: Recent understandings and applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-01
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