Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistors

Author:

Lau F.,Gösele U.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Reference22 articles.

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2. S.M. Hu:Atomic Diffusion in Semiconductors, ed. by D. Shaw (Plenum, New York 1973) p. 217

3. A.F.W. Willoughby:Impurity Doping Processes in Silicon, ed. by F.F.Y. Wang (North-Holland, New York 1981) p. 1

4. W. Frank, U. Gösele, H. Mehrer, A. Seeger:Diffusion in Crystalline Solids, ed. by G.E. Murch, A.S. Nowick (Academic, New York 1984) pp. 110–116

5. R.B. Fair, J.C.C. Tsai: J. Electrochem. Soc.124, 1107 (1977)

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4. Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01

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