1. Lateral dopant profiling in semiconductors by force microscopy using capacitive detection
2. Bronner G. B. etal 1995 A fully planarized 0.25 m m CMOS technology for 256 M bit DRAM and beyond. Technical Digest VLSI Technology Symposium Kyoto Japan.
3. A fundam ental perform ance lim it of optim ized 3.3 V su b q u arter micron overlapped LDD M O SFETs;El;IE E E Trans. Electron Dev.,1992
4. Cooke G. Dowsett M. G. Hill C. Clark E. A. Pearson P. Snowden I. & Lewis B. 1989 Two-dim ensional analysis and sem iconductors a t dopant sensitivity using SIMS. In Secondary ion mass spectropmetry S IM S VII. Chilchester: Wiley.
5. Two dimensional profiling using secondary ion mass spectrometry