Properties of plasma‐enhanced chemical‐vapor‐depositeda‐SiNx:H by various dilution gases
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357428
Reference42 articles.
1. Characterization of silicon nitride films formed in an RF glow discharge
2. Growth and electronic properties of thin Si3N4films grown on Si in a nitrogen glow discharge
3. Atomic microstructure and electronic properties ofa‐SiNx:H deposited by radio frequency glow discharge
4. Electrical properties of Si‐N films deposited on silicon from reactive plasma
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