Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect
Author:
Affiliation:
1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, U.S.A.
Funder
Bisgrove Scholar program from Science Foundation Arizona
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4954296
Reference34 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier
3. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
4. Auger recombination in InGaN measured by photoluminescence
5. Effects of macroscopic polarization in III-V nitride multiple quantum wells
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