High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier
Author:
Affiliation:
1. Materials DepartmentUniversity of CaliforniaSanta BarbaraCA93106USA
2. School of Electrical, Computer and Energy EngineeringArizona State UniversityTempeAZ85287USA
3. Electrical Engineering DepartmentNational Taiwan UniversityTaipei10617Taiwan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.1647
Reference19 articles.
1. Auger recombination rates in nitrides from first principles
2. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
3. Origin of efficiency droop in GaN-based light-emitting diodes
4. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
5. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
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