Effects of space charge distribution on ferroelectric hysteresis loops considering the inhomogeneous built-in electric field: A phase field simulation-Reference-Cited by-同舟云学术

Effects of space charge distribution on ferroelectric hysteresis loops considering the inhomogeneous built-in electric field: A phase field simulation

Published:2012-12 Issue:11 Volume:112 Page:114103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang X. L.,Li B.,Zhong X. L.,Zhang Y.,Wang J. B.,Zhou Y. C.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4767702

Reference26 articles.

1. Ferroelectric Memories

2. Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

3. Robust bi-stable memory operation in single-layer graphene ferroelectric memory

4. Simulation of oxygen vacancy induced phenomena in ferroelectric thin films

5. Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

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