Nature of compensating luminescence centers in Te‐diffused and ‐doped GaSb-Reference-Cited by-同舟云学术

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Nature of compensating luminescence centers in Te‐diffused and ‐doped GaSb

Published:1996-07-15 Issue:2 Volume:80 Page:1112-1115
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Dutta P. S.¹,Méndez B.²,Piqueras J.²,Dieguez E.³,Bhat H. L.¹

Affiliation:

1. Department of Physics, Indian Institute of Science, Bangalore‐560 012, India

2. Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense, E‐28040 Madrid, Spain

3. Departamento de Física de Materiales, Universidad Autónoma, Cantoblanco, 28049 Madrid, Spain

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference14 articles.

1. A. G. Milnes and A. Y. Polyakov, Solid-State Electron. 36, 803 (1993).SSELA50038-1101

2. K. Nakashima, Jpn. J. Appl. Phys. 20, 1085 (1981).JJAPA50021-4922

3. A. I. Lebedev and I. A. Strel’nikova, Sov. Phys. Semicond. 13, 229 (1979).SPSEAX0038-5700

4. P. S. Dutta, K. S. Sangunni, H. L. Bhat, and V. Kumar, J. Cryst. Growth 141, 44 (1994).JCRGAE0022-0248

5. B. Méndez and J. Piqueras, J. Appl. Phys. 69, 2776 (1991).JAPIAU0021-8979

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