A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234820
Reference38 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Thermodynamic stability of binary oxides in contact with silicon
4. Electrical Properties of Single Crystalline CeO2High-k Gate Dielectrics Directly Grown on Si (111)
5. MOCVD growth of (100)-oriented CeO2 thin films on hydrogen-terminated Si(100) substrates
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