Mass and energy dependence of depth resolution in secondary‐ion mass spectrometry experiments with iodine, oxygen, and cesium beams on AlGaAs/GaAs multilayer structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101341
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1. Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11
2. Semiconductor profiling with sub-nm resolution: Challenges and solutions;Applied Surface Science;2008-12
3. The fate of the (reactive) primary ion: Sputtering and desorption;Applied Surface Science;2008-12
4. Short Communication SIMS study of GaAsN/GaAs multiple quantum wells;Surface and Interface Analysis;2000
5. Cascade mixing inAlxGa1−xAs/GaAsduring sputter profiling by noble-gas ions;Physical Review B;1999-11-15
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