Plasma etching of sputtered Mo and MoSi2thin films in NF3gas mixtures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331488
Reference29 articles.
1. Refractory metal gate processes for VLSI applications
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4. 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective
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