Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366772
Reference27 articles.
1. Superlattice and Negative Differential Conductivity in Semiconductors
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1. Theoretical Modeling of Triple‐Barrier Resonant‐Tunneling Diodes Based on AlGaN/GaN Heterostructures;physica status solidi (a);2019-10-21
2. Strain Compensated InGaAs/AlAs Triple Barrier Resonant Tunneling Structures for THz Applications;IEEE Transactions on Terahertz Science and Technology;2017-11
3. Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications;IEICE Transactions on Electronics;2016
4. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures;Semiconductor Science and Technology;2015-09-21
5. Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy;Journal of Crystal Growth;2015-05
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