Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics
Author:
Affiliation:
1. Univ. Montpellier, IES, UMR 5214, F-34000 Montpellier, France and CNRS, IES, UMR 5214, F-34000 Montpellier, France
Funder
French DGA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4895983
Reference28 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization
3. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
4. InAs/GaSb superlattice technology
5. High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices
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