Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

Abstract

We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of a larger bandgap for absorbing the blue band infrared/barrier/p-type layer, and a “red channel” (RC) diode which has a pBn architecture, a p-type layer of a smaller bandgap for absorbing the red band infrared/barrier/n-type layer. Each has a unipolar barrier using a T2SL lattice matched to a GaSb substrate to impede the flow of majority carriers from the absorbing layer. Each channel in the DBIRD can be independently accessed with a low bias voltage as is preferable for high-speed thermal imaging. The device modeling of DBIRDs and simulation results of the current–voltage characteristics under dark and illuminated conditions are also presented. They predict that the dual-band operation of the DBIRD will produce low dark currents and 45–56% quantum efficiencies for the in-band photons in the BC with λc = 5.58 μm, and a nearly constant 32% in the RC with λc = 8.05 μm. The spectral quantum efficiency of the BC for 500 K blackbody radiation is approximately 50% over the range of λ = 3–4.7 μm, while that of the RC has a peak of 42% at 5.9 μm. The DBIRD may provide improved high-speed dual-band imaging in comparison with NBn dual-band detectors.