Copper passivation of dislocations in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342023
Reference10 articles.
1. Passivation of grain boundaries in polycrystalline silicon
2. Studies of the hydrogen passivation of silicon grain boundaries
3. Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon
4. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide
5. Effect of dislocations in metal‐insulator‐semiconductor solar cells
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2. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
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4. Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cells;physica status solidi (c);2014-09-12
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