Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3684603
Reference24 articles.
1. Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77K
2. A microscopic model of electron transport in quantum dot infrared photodetectors
3. Quantum dot infrared photodetectors: Comparison of experiment and theory
4. Quantum dots-in-a-well infrared photodetectors
5. Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors
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1. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells;Journal of Applied Physics;2016-05-16
2. Microscopic model for intersubband gain from electrically pumped quantum-dot structures;Physical Review B;2014-10-03
3. Modified Drude model for free-carrier absorption due to bound-to-continuum transition in quantum-dot semiconductor optical amplifier;Journal of Applied Physics;2013-10-21
4. Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-to-continuum excitation;Journal of Applied Physics;2013-06-14
5. Direct and indirect intraband optical absorption due to carrier transitions from discrete levels to continuum states in quantum dot system;Applied Physics Letters;2013-03-18
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