Electron beam induced x-ray emission: An in situ probe for composition determination during molecular beam epitaxy growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122830
Reference10 articles.
1. Automated control of III–V semiconductor composition and structure by spectroellipsometry
2. Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
3. Insitu spectral ellipsometry for real-time measurement and control
4. Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy
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2. In situ Auger probe enabling epitaxy composition control of alloys by elemental surface analysis;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
3. Spectroscopies combined with reflection high-energy electron diffraction (RHEED) for real-time in situ surface monitoring of thin film growth;In Situ Characterization of Thin Film Growth;2011
4. Element-Specific Surface X-Ray Diffraction Study ofGaAs(001)−c(4×4);Physical Review Letters;2006-02-08
5. In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS;MRS Proceedings;2005
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