Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3250172
Reference19 articles.
1. Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions
2. Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer
3. Very Large Tunneling Anisotropic Magnetoresistance of a(Ga,Mn)As/GaAs/(Ga,Mn)AsStack
4. Origin of the Tunnel Anisotropic Magnetoresistance inGa1−xMnxAs/ZnSe/Ga1−xMnxAsMagnetic Tunnel Junctions of II-VI/III-V Heterostructures
5. Voltage-controlled tunneling anisotropic magnetoresistance of a ferromagnetic p++-(Ga,Mn)As∕n+-GaAs Zener-Esaki diode
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1. Tunneling Anomalous and Spin Hall Effects;Physical Review Letters;2015-07-30
2. In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current;Applied Physics Letters;2015-06-29
3. Spin-dependent phenomena and device concepts explored in (Ga,Mn)As;Reviews of Modern Physics;2014-07-11
4. Dilute ferromagnetic semiconductors: Physics and spintronic structures;Reviews of Modern Physics;2014-03-24
5. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport;Applied Physics Reviews;2014-03
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