Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126038
Reference6 articles.
1. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
2. Dephasing in InAs/GaAs quantum dots
3. Heterodyne pump-probe and four-wave mixing in semiconductor optical amplifiers using balanced lock-in detection
4. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
5. Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
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