Three-dimensional structure of the buffer/absorber interface in CdS/CuGaSe2 based thin film solar cells-Reference-Cited by-同舟云学术

Three-dimensional structure of the buffer/absorber interface in CdS/CuGaSe2 based thin film solar cells

Published:2009-10-26 Issue:17 Volume:95 Page:173502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rusu M.,Bär M.,Lehmann S.,Sadewasser S.,Weinhardt L.,Kaufmann C. A.,Strub E.,Röhrich J.,Bohne W.,Lauermann I.,Jung Ch.,Heske C.,Lux-Steiner M. Ch.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3253419

Reference19 articles.

1. A. Rockett, A. Agarwal, L.C. Yang, E. Banda, G. Kenshole, C. J. Kiely, and H. Talich Conference Record of the 21st IEEE PVSC (IEEE, New York, 1990), p. 764.

2. Anomalous Grain Boundary Physics in PolycrystallineCuInSe2: The Existence of a Hole Barrier

3. Evidence for a Neutral Grain-Boundary Barrier in Chalcopyrites

4. The electrical properties of polycrystalline silicon films

5. Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements

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