Plasmon-mediated energy relaxation in graphene-Reference-Cited by-同舟云学术

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Plasmon-mediated energy relaxation in graphene

Published:2015-12-28 Issue:26 Volume:107 Page:262103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ferry D. K.¹^ORCID,Somphonsane R.²,Ramamoorthy H.³,Bird J. P.³

Affiliation:

1. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA

2. Department of Physics, King Mongkut's Institute of Technology, Ladkrabang, Bangkok 10520, Thailand

3. Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500, USA

Funder

Thailand Research Fund (TRF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4938760

Reference43 articles.

1. See, e.g., E. M. Conwell , High Field Transport in Semiconductors ( Academic Press, New York, 1967).

2. Current saturation in zero-bandgap, top-gated graphene field-effect transistors

3. Energy Dissipation in Graphene Field-Effect Transistors

4. Transport Properties of Graphene in the High-Current Limit

5. Slowing hot-carrier relaxation in graphene using a magnetic field

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly Confined Surface Plasmon Polaritons from Graphene Quantum Cherenkov Effect;Physical Review Applied;2019-11-07

2. The electron–electron interaction;Semiconductors (2nd Edition);2019-11

3. Carrier statistics in graphene at high electric field;Semiconductor Science and Technology;2017-01-20

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