Carrier statistics in graphene at high electric field
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/32/i=2/a=025018/pdf
Reference46 articles.
1. The electronic properties of graphene
2. Graphene transistors
3. High-field transport and velocity saturation in graphene
4. Inelastic scattering and current saturation in graphene
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