Tunneling carrier escape from InAs self-assembled quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1402642
Reference13 articles.
1. Electron and hole energy levels in InAs self‐assembled quantum dots
2. Electronic structure of self-assembled InAs quantum dots in GaAs matrix
3. Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots
4. Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a pn structure
5. Deep level transient spectroscopy of InP quantum dots
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1. Charge sensitivity simulation on a double barrier GaAs/InGaAs/InAs quantum dot-in-well hybrid structure photodetector;Optical and Quantum Electronics;2015-01-07
2. Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation;IET Optoelectronics;2014-04
3. Defect mediated extraction in InAs/GaAs quantum dot solar cells;Solar Energy Materials and Solar Cells;2012-07
4. Nonlinear effects of the photocurrent in self-assembled InAs/GaAs quantum dots;Journal of Applied Physics;2011-03
5. Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots;Journal of Applied Physics;2010-09-15
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