Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.5499/fulltext
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1. Doping in III-V Semiconductors
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3. Measurement of isotype heterojunction barriers byC‐Vprofiling
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5. Capacitance-Voltage Characteristics of a Quantum Well within a Schottky Layer
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