X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3054336
Reference17 articles.
1. Oxide/III-V Compound Semiconductor Interfaces
2. Fabrication of in‐plane‐gate transistor structures by focused laser beam‐induced Zn doping of modulation‐doped GaAs/AlGaAs quantum wells
3. Fabrication of lateral npn‐phototransistors with high gain and sub‐μm spatial resolution
4. An X-ray photoelectron spectroscopy study of the oxides of GaAs
5. GaAs interfacial self-cleaning by atomic layer deposition
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1. Surface pinning effect of an antiferromagnetic interlayer exchange coupling in (Ga1−x Mn x As/GaAs:Be)10 multilayer;Journal of the Korean Physical Society;2017-07
2. Deoxidation of (001) III–V semiconductors in metal-organic vapour phase epitaxy;Journal of Applied Physics;2016-08-28
3. Sensitive determination of the Young's modulus of thin films by polymeric microcantilevers;Measurement Science and Technology;2013-11-01
4. Effects of Growth Conditions on the GaAs/AlAs Superlattices by Grazing Incidence X-Ray Reflectivity;Journal of Nanoscience and Nanotechnology;2013-02-01
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