Recovery kinetics in high temperature annealed AlN heteroepitaxial films
Author:
Affiliation:
1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA
2. Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Funder
National Science Foundation
Air Force Office of Scientific Research
Army Research Office
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0002891
Reference24 articles.
1. III-Nitride Ultraviolet Emitters
2. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes
3. Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
4. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
5. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
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