Growth of SiC using hexamethyldisilane in a hydrogen‐poor ambient
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111819
Reference8 articles.
1. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
2. Growth and Characterization of Cubic SiC Single‐Crystal Films on Si
3. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
4. The role of carrier gases in the epitaxial growth of β-SiC on Si by CVD
5. Low‐Temperature Growth of 3 C ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material
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