Backscattering and electron microscopy study of mega‐electron volt gold implantation into silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358008
Reference19 articles.
1. Interaction of MeV ions with pre‐existing damage in Si: A new ion beam annealing mechanism
2. Lattice damage and silicide formation by deep implantations into silicon
3. Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams
4. Zone refining and enhancement of solid phase epitaxial growth rates in Au‐implanted amorphous Si
5. Damage nucleation and annealing in MeV ion‐implanted Si
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1. Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation;Silicon;2013-07-17
2. Materials Processing;Ion Beams in Materials Processing and Analysis;2012
3. Ion-beam-induced enhanced diffusion from gold thin films in silicon;Journal of Physics: Condensed Matter;2008-11-06
4. Ion induced segregation in gold nanostructured thin films on silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-11
5. Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-07
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