Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance
Author:
Affiliation:
1. Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Einsteinufer 37, 10587 Berlin, Germany
Funder
Bundesministerium für Bildung und Forschung (BMBF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4971843
Reference46 articles.
1. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
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4. Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56μm pulse excitation
5. Terahertz-time domain spectrometer with 90 dB peak dynamic range
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